1/3 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.01 - rev.e 2sd1733 (1) base (2) collector (3) emitter rohm : mpt3 eiaj : sc-62 2sd1898 abbreviated symbol : df ?0.1 +0.2 ?0.05 +0.1 0.1 +0.2 ?0.1 (3)(2)(1) 4.00.3 1.00.2 0.50.1 2.5 3.00.2 1.50.1 1.50.1 0.40.1 0.50.1 0.40.1 0.4 1.5 4.5 1.60.1 (1) base (2) collector (3) emitter rohm : cpt3 eiaj : sc-63 ? 0.1 + 0.2 + 0.3 ? 0.1 2.3 0.2 2.3 0.2 0.65 0.1 0.9 0.75 5.5 1.5 0.3 6.5 0.2 5.1 c0.5 (3) (2) (1) 0.9 ? 0.1 + 0.2 1.0 0.2 0.55 0.1 9.5 0.5 2.5 1.5 2.3 0.5 0.1 power transistor (80v, 1a) 2sd1898 / 2sd1733 ? features ? dimensions (unit : mm) 1) high v ceo , v ceo =80v 2) high i c , i c =1a (dc) 3) good h fe linearity 4) low v ce (sat) 5) complements the 2sb1260 / 2sb1181 ? structure epitaxial planer type npn silicon transistor ? absolute maximum ratings (ta=25 ?c) parameter symbol limits unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5v collector current i c 1 a (dc) 2 a (pulse) ?1 junction temperature tj 150 c storage temperature tstg ?55 to +150 c collector power dissipation p c 0.5 2 1 ?2 10 w w w w (tc=25c) ?1 pw=20ms, duty=1 / 2 ?2 when mounted on a 40400.7mm ceramic board. 2sd1898 2sd1733
2/3 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.01 - rev.e data sheet 2sd1898 / 2sd1733 ? absolute maximum ratings (ta=25 ?c) parameter symbol limits unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5v collector current i c 1 a (dc) 2 a (pulse) 1 junction temperature tj 150 c storage temperature tstg ?55 to +150 c collector power dissipation p c 0.5 2 1 2 10 w w w w (tc=25c) 1 pw=20ms, duty=1 / 2 2 when mounted on a 40400.7mm ceramic board. 2sd1898 2sd1733 ? electrical characteristics (ta=25 ?c) parameter collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance symbol bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t cob min. 120 80 5 ? ? ? ? ? ? ? ? ? ? 0.15 100 20 ? ? ? 1 0.5 0.4 ? ? vi c = 50a i c = 1ma i e = 50a v cb = 100v v eb = 4v i c /i b = 500ma/50ma v ce = 10v, i e =? 50ma, f = 100mhz v ce = 3v, i c = 0.5a v cb = 10v, i e = 0a, f = 1mhz v v a a v 120 ? 390 ? mhz pf typ. max. unit conditions measured using pulse current ? packaging specifications and h fe package taping code 2sd1898 type t100 1000 h fe tl 2500 ? ? 2sd1733 qr qr basic ordering unit (pieces) h fe values are classified as follows : item h fe r 180 to 390 q 120 to 270
3/3 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.01 - rev.e data sheet 2sd1898 / 2sd1733 ? electrical characteristic curves 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 collector current : i c (ma) base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics 1000 100 10 1 ta=25c v ce =5v 24 0810 6 collector current : i c ( a) collector to emitter voltage : v ce ( v) fig.2 grounded emitter output characteristics 1.0 0 0.8 0.6 0.4 0.2 6ma 5ma 4ma 3ma 2ma 1ma i b =0ma ta=25c 0 100 1000 100 0 10 1000 dc current gain : h fe collector current : i c ( ma) fig.3 dc current gain vs. collector current ta=25c v ce =3v 1v 0.01 0.1 1.0 2.0 0.2 0.02 0.05 0.5 100 0 10 1000 collector saturation voltage : v ce(sat) ( v) collector current : i c ( ma) fig.4 collector-emitter saturation voltage vs. collector current i c /i b =20/1 ta=25c 10/1 1 2 5 10 20 50 100 200 500 100 0 transition frequency : f t (mhz) emitter current : ?i e (ma) fig.5 gain bandwidth product vs. emitter current 500 200 100 50 20 10 5 2 ta=25c v ce =5v 0.1 0.2 0.5 1 2 5 10 20 50 100 collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) collector to base voltage : v cb ( v) emitter to base voltage : v eb ( v) fig.6 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage 100 1000 10 1 ta=25c f=1mhz i e =0a ic=0a ic max (pulse) ta=25c single non-repetitive pulse pw=10m s pw=100ms dc collector to emitter voltage : v ce ( v) collector current : i c ( a) 0.1 0.2 0.5 1 2 5 10 20 50 100 500200 100 0 10 5 2 1 20m 10m 5m 2m 1m 50m 100m 200m 500m fig.7 safe operating area (2sd1898)
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